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IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).
This document also defines the terms pertaining to the conventional BTI test method.
Product Details
- Edition:
- 1.0
- Published:
- 07/15/2020
- Number of Pages:
- 44
- File Size:
- 1 file , 1.7 MB